STM8L101G2 STMicroelectronics, STM8L101G2 Datasheet - Page 50

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STM8L101G2

Manufacturer Part Number
STM8L101G2
Description
Ultra Low Power MCUs, STM8L
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8L101G2

Low Power Consumption (halt
0.3 μA, Active-halt
Temp. Range
-40 to 85 °C and 125 °C
Three Low Power Modes
Wait, Active-halt, Halt

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Electrical parameters
9.3.6
Table 26.
1. V
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Not tested in production.
6. R
7. Data guaranteed by Design, not tested in production.
50/81
Symbol
C
V
R
Figure
V
V
I
IO
lkg
hys
DD
PU
PU
IH
IL
(7)
= 3.0 V, T
pull-up equivalent resistor based on a resistive transistor (corresponding I
22).
Input low level voltage
Input high level voltage
Schmitt trigger voltage hysteresis
Input leakage current
Weak pull-up equivalent resistor
I/O pin capacitance
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
I/O static characteristics
A
= -40 to 85 °C unless otherwise specified.
Parameter
(4)
(2)
(2)
(6)
(1)
(3)
Doc ID 15275 Rev 11
Standard I/Os
True open drain I/Os
Standard I/Os
True open drain I/Os
V
True open drain I/Os
V
Standard I/Os
True open drain I/Os
V
Standard I/Os
V
True open drain I/Os
V
PA0 with high sink LED
driver capability
V
DD
DD
SS
SS
SS
IN
V
< 2 V
V
V
V
Conditions
SS
IN
IN
IN
2 V
V
V
V
DD
DD
DD
DD
and T
PU
A
0.70 x V
0.70 x V
unless otherwise specified. All
current characteristics described in
V
V
SS
SS
Min
30
-
-
-
-
-
-
-0.3
-0.3
DD
DD
Typ
200
250
45
5
-
-
-
-
-
-
-
0.3 x V
0.3 x V
V
STM8L101xx
200
200
DD
50
Max
5.2
5.5
60
-
-
-
+0.3
(5)
(5)
(5)
DD
DD
Unit
mV
nA
k
pF
V
V

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