STM8TL53C4 STMicroelectronics, STM8TL53C4 Datasheet - Page 51

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STM8TL53C4

Manufacturer Part Number
STM8TL53C4
Description
8-bit, ultra-low-power, touch-sensing MCUs with 16-Kbyte Flash and proximity detection
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8TL53C4

Operating Power Supply
1.65 V to 3.6 V
Temperature Range
–40 °C to 85 °C
4 Low Power Modes
Wait, Active-halt with AWU (1 μA), Active-halt with ProxSense™ (10 μA with scan every 200 ms),Halt (0.4 μA)
Dynamic Power Consumption
150 μA/MHz
Fast Wakeup From Halt Mode
4.7 μs
Ultralow Leakage Per I/o
50 nA

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0
STM8TL53xx
9.3.9
Figure 16. Typical application with I
1. Measurement points are done at CMOS levels: 0.3 x V
EMC characteristics
Susceptibility tests are performed on a sample 36 basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000-4-4 standard.
SDA
SCL
I
2
t
C BUS
f(SDA)
t
h(STA)
START
4.7kΩ
t
w(SCLH)
t
r(SDA)
V
DD
t
w(SCLL)
Doc ID 022344 Rev 1
4.7kΩ
V
DD
t
su(SDA)
t
r(SCL)
100Ω
100Ω
2
C bus and timing diagram
t
h(SDA)
t
f(SCL)
DD
SDA
SCL
and 0.7 x V
STM8TL53xx
DD.
t
su(STA)
Electrical parameters
1)
t
su(STO)
t
w(STO:STA)
STOP
REPEATED START
DD
and V
START
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