STM8L151C3 STMicroelectronics, STM8L151C3 Datasheet - Page 71
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STM8L151C3
Manufacturer Part Number
STM8L151C3
Description
STM8L-Ultra Low Power-8 bits Microcontrollers
Manufacturer
STMicroelectronics
Datasheet
1.STM8L151G2.pdf
(111 pages)
Specifications of STM8L151C3
Operating Power Supply
1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
Temperature Range
-40 to 85 or 125 °C
5 Low Power Modes
Wait, Low power run, Low power wait, Active-halt with RTC, Halt
Ultralow Leakage Per I/0
50 nA
Fast Wakeup From Halt
5 μs
Max Freq
16 MHz, 16 CISC MIPS peak
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L151C3T3
Manufacturer:
STMicroelectronics
Quantity:
10 000
Company:
Part Number:
STM8L151C3T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM8L151x2, STM8L151x3
7.3.5
Table 32.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(3 and 6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 and 6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 31.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
= –40 to +125 °C
= –40 to +85 °C
= –40 to +125 °C
Parameter
Doc ID 018780 Rev 3
(1)
Halt mode (or Reset)
T
T
A
A
T
T
=+25 °C, V
=+25 °C, V
T
f
A
A
SYSCLK
A
Conditions
T
T
(3 and 6 suffix),
T
T
= –40 to +105 °C
= –40 to +125 °C
RET
RET
= –40 to +85 °C
RET
RET
Conditions
(3 suffix) or
(3 suffix)
= +125 °C
= +125 °C
= +85 °C
= +85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Electrical parameters
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
71/111
Unit
mA
ms
ms
V
V