ST7LIT10BY0 STMicroelectronics, ST7LIT10BY0 Datasheet - Page 14
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ST7LIT10BY0
Manufacturer Part Number
ST7LIT10BY0
Description
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
Manufacturer
STMicroelectronics
Datasheet
1.ST7LIT10BF0.pdf
(159 pages)
Specifications of ST7LIT10BY0
Up To 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention
20 years at 55˚C.
128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55˚C.
Clock Sources
Internal 1% RC oscillator (on ST7FLITE15B and ST7FLITE19B), crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-Halt, Auto Wake-up from Halt, Wait and Slow
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ST7LITE1xB
FLASH PROGRAM MEMORY (Cont’d)
4.5 Memory Protection
There are two different types of memory protec-
tion: Read Out Protection and Write/Erase Protec-
tion which can be applied individually.
4.5.1 Read out Protection
Readout protection, when selected provides a pro-
tection against program memory content extrac-
tion and against write access to Flash memory.
Even if no protection can be considered as totally
unbreakable, the feature provides a very high level
of protection for a general purpose microcontroller.
Both program and data E
In flash devices, this protection is removed by re-
programming the option. In this case, both pro-
gram and data E
erased and the device can be reprogrammed.
Read-out protection selection depends on the de-
vice type:
– In Flash devices it is enabled and removed
– In ROM devices it is enabled by mask option
4.5.2 Flash Write/Erase Protection
Write/erase protection, when set, makes it impos-
sible to both overwrite and erase program memo-
ry. It does not apply to E
provide advanced security to applications and pre-
vent any change being made to the memory con-
tent.
14/159
1
through the FMP_R bit in the option byte.
specified in the Option List.
2
memory are automatically
2
2
memory are protected.
data. Its purpose is to
Warning: Once set, Write/erase protection can
never be removed. A write-protected flash device
is no longer reprogrammable.
Write/erase protection is enabled through the
FMP_W bit in the option byte.
4.6 Related Documentation
For details on Flash programming and ICC proto-
col, refer to the ST7 Flash Programming Refer-
ence Manual and to the ST7 ICC Protocol Refer-
ence Manual
4.7 Register Description
FLASH CONTROL/STATUS REGISTER (FCSR)
Read/Write
Reset Value: 000 0000 (00h)
1st RASS Key: 0101 0110 (56h)
2nd RASS Key: 1010 1110 (AEh)
Note: This register is reserved for programming
using ICP, IAP or other programming methods. It
controls the XFlash programming and erasing op-
erations.
When an EPB or another programming tool is
used (in socket or ICP mode), the RASS keys are
sent automatically.
7
0
0
.
0
0
0
OPT
LAT
PGM
0
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