STR911FAM46 STMicroelectronics, STR911FAM46 Datasheet - Page 72

• Manufacturer Part Number: STR911FAM46
• Description: ARM966E-S™ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
• Manufacturer: STMicroelectronics

Specifications of STR911FAM46

• Arm966e-s Risc Core: Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories (SRAM and Flash)

Electrical characteristics
7.9
7.9.1
Table 27.
1. Data based on characterization results, not tested in production.
72/102
Symbol
V
V
FESD
FFTB
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
Fast transient voltage burst limits
to be applied through 100pF on
V
functional disturbance
DD
EMS data
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
and V
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
and V
conforms with the IEC 1000-4-4 standard.
DDQ
Parameter
SS
pins to induce a
through a 100pF capacitor, until a functional disturbance occurs. This test
V
f
V
f
conforms to IEC 1000-4-4
OSC
OSC
DD
DD
Doc ID 13495 Rev 6
=1.8 V, V
= 1.8 V, V
/f
/f
CPUCLK
CPUCLK
DDQ
= 4 MHz/96 MHz PLL
= 4 MHz/96 MHz PLL
DDQ
Conditions
= 3.3 V, T
= 3.3 V, T
A
A
= +25 °C,
= +25 °C,
Criteria
Severity/
1B
4A
STR91xFAxxx
(1)
DD,
V
Unit
DDQ
kV