ACST12 STMicroelectronics, ACST12 Datasheet - Page 4
ACST12
Manufacturer Part Number
ACST12
Description
Overvoltage protected AC switch
Manufacturer
STMicroelectronics
Datasheet
1.ACST12.pdf
(13 pages)
Specifications of ACST12
High Noise Immunity
static dV/dt > 2000 V/μs
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ACST12-7CG-TR
Manufacturer:
ST
Quantity:
20 000
Part Number:
ACST12-7ST
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
ACST1235-8FP
Manufacturer:
ST
Quantity:
2 400
Characteristics
4/13
Figure 6.
Figure 8.
Figure 10. Relative variation of holding
10000
1000
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
100
10
-50
10
1
1
0.01
I ,I [T ]/I , I [T = 25 °C]
0
H
I
TM
T
L
I
j
TSM
=125 °C
(A)
j
(A), I t (A s)
H
-25
L
2
j
On-state characteristics
(maximum values)
Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I
current (I
versus junction temperature
2
1
0
T
j
=25 °C
0.10
Typical values
dI/dt limitation: 100 A/µs
H
25
2
) and latching current (I
V
50
TM
(V)
3
1.00
75
T
2
I²t
j
t
initial=25 °C
4
V
R
100
I
t
to
d
T
TSM
P
I
j
= 30 m
I
Doc ID 15238 Rev 4
= 0.90 V
(ms)
H
max :
L
T
j
(°C)
10.00
125
L
5
)
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
130
120
110
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
1
0.1
I , V [T ] / I , V [T = 25 °C]
I
GT
(di/dt)c[(dV/dt)c] / Specified(di/dt)c
TSM
T
Repetitive
V
(A)
C
GT
GT
=104 °C
Q1-Q2-Q3
j
-25
GT
I
GT
Q3
Non repetitive surge peak on-state
current versus number of cycles
(T
Relative variation of gate triggering
current and gate voltage versus
junction temperature (typical value)
I
decrease of main current (di/dt)c
versus (dV/dt)c
GT
GT
Q1-Q2
j
j
initial = 25 °C)
0
10
1
T
Non repetitive
j
initial=25 °C
25
50
Number of cycles
10
100
ACST12-7Cxx
ACST12 - 7Sxx
75
(dV/dt)c (V/µs)
t=20ms
One cycle
100
ACST12
T j (°C)
100
1000
125