ACST12 STMicroelectronics, ACST12 Datasheet - Page 4

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ACST12

Manufacturer Part Number
ACST12
Description
Overvoltage protected AC switch
Manufacturer
STMicroelectronics
Datasheet

Specifications of ACST12

High Noise Immunity
static dV/dt > 2000 V/μs

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Characteristics
4/13
Figure 6.
Figure 8.
Figure 10. Relative variation of holding
10000
1000
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
100
10
-50
10
1
1
0.01
I ,I [T ]/I , I [T = 25 °C]
0
H
I
TM
T
L
I
j
TSM
=125 °C
(A)
j
(A), I t (A s)
H
-25
L
2
j
On-state characteristics
(maximum values)
Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I
current (I
versus junction temperature
2
1
0
T
j
=25 °C
0.10
Typical values
dI/dt limitation: 100 A/µs
H
25
2
) and latching current (I
V
50
TM
(V)
3
1.00
75
T
2
I²t
j
t
initial=25 °C
4
V
R
100
I
t
to
d
T
TSM
P
I
j
= 30 m
I
Doc ID 15238 Rev 4
= 0.90 V
(ms)
H
max :
L
T
j
(°C)
10.00
125
L
5
)
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
130
120
110
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
1
0.1
I , V [T ] / I , V [T = 25 °C]
I
GT
(di/dt)c[(dV/dt)c] / Specified(di/dt)c
TSM
T
Repetitive
V
(A)
C
GT
GT
=104 °C
Q1-Q2-Q3
j
-25
GT
I
GT
Q3
Non repetitive surge peak on-state
current versus number of cycles
(T
Relative variation of gate triggering
current and gate voltage versus
junction temperature (typical value)
I
decrease of main current (di/dt)c
versus (dV/dt)c
GT
GT
Q1-Q2
j
j
initial = 25 °C)
0
10
1
T
Non repetitive
j
initial=25 °C
25
50
Number of cycles
10
100
ACST12-7Cxx
ACST12 - 7Sxx
75
(dV/dt)c (V/µs)
t=20ms
One cycle
100
ACST12
T j (°C)
100
1000
125

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