BTW68 STMicroelectronics, BTW68 Datasheet - Page 2

• Manufacturer Part Number: BTW68
• Description: 30A SCRs
• Manufacturer: STMicroelectronics

Specifications of BTW68

• On-state Rms Current: 30 A
• Blocking Voltage: up to 1200 V
• Gate Current: 50 mA

Characteristics
1
2/8
Characteristics
Table 2.
Table 3.
Table 4.
Symbol
Symbol
Symbol
I
P
R
R
V
T(RMS)
IT
dV/dt
I
I
I
dI/dt
V
V
V
T
I
G(AV)
DRM
RRM
TSM
I
th(j-c)
th(j-a)
RGM
GM
t
I
T
GT
I
I
t
(AV)
GD
stg
GT
TM
gt
²
H
L
q
t
j
On-state current rms (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
V
V
V
I
I
V
gate open
I
V
V
dI
Junction to case (D.C.)
Junction to ambient
²
G
T
G
TM
t Value for fusing
D
D
D
D
DRM
D
TM
= 500 mA, gate open
= 2 x I
= 1.2 x I
Absolute maximum ratings (limiting values)
Electrical characteristics (T
Thermal resistance
= 12 V, R
= V
= V
= 67 % V
= 67% V
= 60 A, t
/dt = 30 A/µs, dV
= V
DRM,
DRM
GT
RRM
GT
, I
, t
DRM
R
p
L
G
DRM
L
r
= 380 µs
= 33
= 200 mA, dI
= 3.3 k
, I
100 ns
TM
= 60 A, V
D
Doc ID 17757 Rev 3
/dt = 20 V/µs
Test conditions
V
V
Parameter
Parameter
DRM
DRM
G
/dt = 1.5 A/µs
R
= 800 V
= 1000 V
= 75 V
j
= 25 °C, unless otherwise specified)
t
t
F = 60 Hz
t
p
p
p
= 8.3 ms
= 10 ms
= 20 µs
T
T
T
T
T
j
j
j
j
j
= 125 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
T
T
T
T
T
T
T
c
c
j
j
j
j
j
= 25 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 80 °C
= 80 °C
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
TYP.
TYP.
TYP.
- 40 to + 150
- 40 to + 125
Value
Value
Value
500
250
100
420
400
800
100
1.5
0.2
2.1
1.1
30
19
50
75
40
20
50
8
1
5
2
6
BTW68
°C/W
°C/W
A/µs
Unit
V/µs
Unit
Unit
A
mA
mA
mA
mA
µA
°C
µs
µs
W
V
V
V
A
A
A
A
V
2
S