TS1220 STMicroelectronics, TS1220 Datasheet - Page 4

• Manufacturer Part Number: TS1220
• Description: 12A sensitive gate SCRs
• Manufacturer: STMicroelectronics

Characteristics
4/13
Figure 3.
Figure 5.
Figure 7.
3.0
2.0
1.0
0.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.5
1.5
0.5
1.00
0.10
0.01
-40
1E-2
I
I
0
GT H L
T(AV)
K=[Z
,I ,I [T ] /
Device mounted on FR4 with
recommended pad layout
-20
(A)
= 180°
th(j-a)
I
GT
Average and D.C. on-state current
versus ambient temperature
(DPAK)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Relative variation of gate trigger
and holding current versus junction
temperature
j
25
/R
1E-1
DPAK
0
I
th(j-a)
GT H L
,I ,I [T =25°C]
D PAK
D.C.
2
20
]
50
1E+0
j
D PAK
T
40
2
T (°C)
amb
t (s)
j
p
DPAK
(°C)
60
75
Device mounted on FR4 with
recommended pad layout
1E+1
TO-220AB / IPAK
TN1215 and TYNx12 Series
80
100
100
I
H
1E+2
& I
L
120
Doc ID 7475 Rev 7
5E+2
125
140
Figure 4.
Figure 6.
Figure 8.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.5
0.2
0.1
1E-2
TN1215, TS1220, TYN612, TYN812, TYN1012
1E-3
-40
I [R
I
K=[Z
H
GT H L
,I ,I [T ] /
GK
th(j-c)
-20
] / I [
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
and holding current versus junction
temperature for TS1220 series
Relative variation of holding
current versus gate-cathode
resistance (typical values)
H
/R
j
I
GT
R
th(j-c)
0
I
GK
GT H L
,I ,I [T =25°C]
=1k ]
1E-1
1E-2
]
20
TS1220 Series
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
R
GK
I
H
& I
= 1k
100
L
T
j
120
= 25°C
1E+0
1E+1
140