P0130 STMicroelectronics, P0130 Datasheet - Page 4

• Manufacturer Part Number: P0130
• Description: 0.8A SCRs
• Manufacturer: STMicroelectronics

P0130AA
4/5
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 8:
number of cycles.
8
7
6
5
4
3
2
1
0
10.0
6
5
1
0
4
3
2
-40
1.0
1
0.1
ITSM(A)
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
0
dV/dt[Rgk] / dV/dt[Rgk=1k ]
-20
0.2
Tamb=25°C
Repetitive
Surge peak on-state current versus
0
0.4 0.6
Tj(°C)
10
20
Non repetitive
Tj initial=25°C
0.8
40
Rgk(k
1.0
60
1.2
100
80
Numberofcycles
1.4
100
tp=10ms
1.6
Onecycle
120
1.8 2.0
1000
140
Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
100.0
10
10.0
8
6
4
0
1.0
2
0.1
IH[Rgk]/IH[Rgk=1k ]
0
dV/dt[Cgk] / dV/dt[Rgk=1k ]
0.01
ITSM(A), I t(A s)
1
2
2
2
0.10
Rgk(k
3
Cgk(nF)
tp(ms)
4
1.00
5
6
10.00
7