BTB12 STMicroelectronics, BTB12 Datasheet - Page 2
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BTB12
Manufacturer Part Number
BTB12
Description
12A standard and Snubberless™ Triacs
Manufacturer
STMicroelectronics
Datasheet
1.BTA12.pdf
(12 pages)
Specifications of BTB12
Bta Series Ul1557 Certified (file Ref
81734)
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Characteristics
1
Table 2.
Table 3.
1. Minimum I
2. for both polarities of A2 referenced to A1
2/12
V
(dI/dt)c
Symbol
dV/dt
DSM
Symbol
I
I
P
T(RMS)
GT
I
V
V
H
I
dI/dt
T
I
G(AV)
TSM
I
I
GM
GD
GT
T
L
2
stg
/V
(2)
(1)
t
j
(2)
RSM
(2)
GT
V
R
V
R
T
I
I
V
T
(dV/dt)c = 0.1 V/µs
T
(dV/dt)c = 10 V/µs
T
Without snubber
T
Characteristics
Absolute maximum ratings
Electrical characteristics (T
Snubberless and logic level (3 quadrants)
T
G
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
j
j
j
j
j
D
D
D
is guaranted at 5% of I
Test conditions
L
L
2
G
= 125° C
= 125° C
= 100 mA
= 125° C
= 125° C
= 125° C
t Value for fusing
= 1.2 I
= 30 Ω
= 3.3 kΩ
= 12 V
= V
= 67 %V
= 2 x I
DRM
GT
GT
DRM
, t
r
≤ 100 ns
gate open
j
Quadrant
GT
initial = 25° C)
I - II - III
I - II - III
I - II - III
I - III
max
II
j
Parameter
MAX.
MAX.
MAX.
MAX.
= 25°C, unless otherwise specified)
MIN.
MIN.
MIN.
T1210 T1235 T1250
I
TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
t
F = 120 Hz
t
t
2
p
p
p
6.5
2.9
10
15
25
30
40
PAK / D
= 10 ms
= 10 ms
= 20 µs
T12xx
2
500
6.5
35
35
50
60
PAK /
1000
50
50
70
80
12
T
T
T
t = 20 ms
t = 16.7 ms
T
T
T
c
c
j
j
j
j
= 125° C
= 25° C
= 125° C
= 125° C
1.3
0.2
= 105° C
= 90° C
TW
3.5
10
10
15
20
5
1
BTA12 / BTB12
SW
6.5
2.9
10
15
25
30
40
BTA12, BTB12, T12xx
- 40 to + 150
- 40 to + 125
V
DRM
Value
+ 100
CW
500
6.5
120
126
35
35
50
60
12
78
50
4
1
/V
RRM
1000 V/µs
BW
50
50
70
80
12
Unit
A/µs
A
A/ms
°C
Unit
W
A
A
V
A
mA
mA
mA
²
V
V
s