T8T STMicroelectronics, T8T Datasheet - Page 5

• Manufacturer Part Number: T8T
• Description: 8A Snubberless™ and logic level Triacs
• Manufacturer: STMicroelectronics

T8T
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
1000
1000
6
5
4
3
2
1
0
100
100
25
-50
-50
10
10
(dl / dt) c [T j ] /
0.01
0.01
I H ,
I TSM (A), I²t (A²s)
pulse with width t <10 ms, and corresponding value of I²t
I L
dl /dt limitation: 50 A / µs
[T j ] / I H , I L [T j = 25 °C]
-25
-25
Non repetitive surge peak on-state
current for a sinusoidal
Relative variation of holding
current and latching current versus
junction temperature
decrease of main current versus
junction temperature
50
(dl / dt) c
p
0
0
0.10
0.10
[T j = 125 °C]
25
25
T j (°C)
75
50
50
1.00
1.00
T j initial = 25 °C
75
75
100
I TSM
typical values
I²t
I H
100
100
t p (ms)
Doc ID 16192 Rev 3
T j (°C)
10.00
10.00
I L
125
125
125
Figure 8.
Figure 10. Relative variation of static dV/dt
Figure 12. Relative variation of leakage
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
1.0E+00
7
6
5
4
3
2
1
0
1.0E-01
1.0E-02
1.0E-03
-50
-50
25
I GT , V GT [T j ] / I GT , V GT [T j = 25 °C]
dV / dt [T j ] /
I GT Q1-Q2-Q3
25
I DRM /I RRM [T j ; V DRM / V RRM ] / I DRM /I RRM
-25
-25
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
immunity versus junction
temperature
current versus junction
temperature
I GT Q3
dV / dt
50
[T j = 125 °C; 600 V]
0
0
I GT Q1-Q2
50
[T j = 125 °C]
V DRM = V RRM = 400 V
T j (°C)
for different values of blocking voltage
25
25
75
75
V DRM = V RRM = 600 V
50
50
V DRM = V RRM = 200 V
75
75
V D = V R = 402 V
Characteristics
100
100
typical values
100
100
T j (°C)
T j (°C)
125
125
125
125
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