STGB35N35LZ STMicroelectronics, STGB35N35LZ Datasheet - Page 7
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STGB35N35LZ
Manufacturer Part Number
STGB35N35LZ
Description
EAS 450 mJ, 345 V, internally clamped IGBT
Manufacturer
STMicroelectronics
Datasheet
1.STGP35N35LZ.pdf
(17 pages)
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STGB35N35LZ, STGP35N35LZ
Figure 6.
Figure 8.
I
CES
I
C
(A)
80
60
40
20
0.01
(µA)
100
0
0.1
10
1
0
-50
-25
V
Output characteristics (T
Collector cut-off current vs
temperature
CE
1
= 250 V
0
25
V
2
GE
50
= 0 V
V
GE
75
= 5 V
3
V
100
CE
= 200 V
125
V
V
V
V
V
4
J
GE
GE
GE
GE
GE
= 175 °C) Figure 7.
= 4.5 V
= 4 V
= 3.5 V
= 3 V
= 2.5 V
150
Doc ID 12253 Rev 5
V
T
CE
J
(°C)
175
(V)
5
Figure 9.
I
C
(A)
80
60
40
20
(norm)
1.010
1.005
1.000
0.995
0.990
0.985
0.980
0
V
CES
1
-50
T
J
= 25 °C
-25
Transfer characteristics
Normalized collector emitter
voltage vs temperature
V
CE
2
= 5 V
0
T
25
J
= -40 °C
50
Electrical characteristics
3
75
V
I
C
GE
= 2 mA
100
= 0 V
4
125
T
J
= 175 °C
150
V
T
GE
J
175
(°C)
(V)
5
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