STGWT38IH130D STMicroelectronics, STGWT38IH130D Datasheet - Page 4

• Manufacturer Part Number: STGWT38IH130D
• Description: 33 A - 1300 V - very fast IGBT
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/17
Electrical characteristics
T
Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Table 6.
V
Symbol
J
Symbol
Symbol
V
V
= 25 °C unless otherwise specified.
(BR)CES
t
t
g
CE(sat)
t
t
I
I
r
r
C
GE(th)
C
C
Q
Q
(V
d
(V
d
CES
GES
fs
V
Q
(
(
oes
t
t
res
ies
ge
off
off
F
gc
f
f
off
off
(1)
g
)
)
)
)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Diode forward voltage
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
GE
GE
Static
Dynamic
Inductive load switching times
= 0)
= 0)
Parameter
Parameter
Parameter
CE
= 0)
Doc ID 15697 Rev 3
I
V
V
V
V
V
I
I
V
V
V
I
C
F
F
C
GE
GE
GE
CE
CE
CE
CE
V
R
(see Figure 16)
V
R
T
CE
CE
= 20 A
= 20 A, T
= 20 A,V
= 1 mA
J
CC
CC
G
G
= 15 V, I
= 15 V, I
= V
= 125 °C
=1300 V
=1300 V, T
=± 20 V
= 25 V
= 10 Ω, V
= 10 Ω, V
= 25 V, f = 1 MHz, V
= 960 V,
= 960 V, I
= 960 V, I
Test conditions
GE
Test conditions
Test conditions
, I
,
GE
J
C
I
C
C
C
= 1 mA
= 125 °C
(see Figure 16)
= 20 A
= 20 A, T
=15 V
= 20 A
GE
GE
J
C
C
=125 °C
= 15 V,
= 15 V,
= 20 A
= 20 A
STGW38IH130D, STGWT38IH130D
J
=125 °C
GE
=0
Min.
Min.
1300
-
-
-
-
Min. Typ. Max. Unit
3.75
2900
Typ. Max.
Typ.
155
127
102
284
180
200
424
316
30
18
50
2.1
2.0
1.3
20
Max.
5.75
100
2.8
1.9
1.7
-
-
10
-
-
1
±
Unit
Unit
nC
nC
nC
pF
pF
pF
mA
mA
nA
ns
ns
ns
ns
ns
ns
V
V
V
V
S
V
V