STD3PK50Z STMicroelectronics, STD3PK50Z Datasheet - Page 4

• Manufacturer Part Number: STD3PK50Z
• Description: P-channel 500 V, 3 Ohm, 2.8 A DPAK, Zener-protected SuperMESH Power MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
b. For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed
4/11
Electrical characteristics
(T
Table 4.
Table 5.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
R
C
CASE
V
(BR)DSS
C
o(er)
I
V
when V
I
C
o(tr)
GS(th)
DS(on)
C
Q
Q
DSS
GSS
R
Q
DS
oss
rss
iss
gs
gd
G
g
(1)
(2)
increases from 0 to 80% V
= 25 °C unless otherwise specified)
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent capacitance time
related
Equivalent capacitance
energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
increases from 0 to 80% V
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 18280 Rev 1
DSS
V
V
f = 1MHz open drain
V
V
(see
I
V
V
V
V
V
D
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=25 V, f=1 MHz, V
=10 V
= 0, V
= 400 V, I
= max rating,
= max rating,Tc=125 °C
= ± 25 V
= V
= 10 V, I
Figure
Test conditions
(b)
Test conditions
GS
DS
, I
3)
D
GS
D
= 0 to 400 V
D
= 1.4 A
= 100 µA
= 0
= 2.8 A
GS
=0
Min.
Min.
500
3
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
Typ.
3.75
620
65
22
20
3
STD3PK50Z
Max.
Max.
±10
100
4.5
oss
1
4
-
-
-
-
-
oss
when
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
pF
V
V
Ω
Ω