STP45N65M5 STMicroelectronics, STP45N65M5 Datasheet - Page 5

• Manufacturer Part Number: STP45N65M5
• Description: N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220
• Manufacturer: STMicroelectronics

STx45N65M5
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
(off)
f
SD
t
t
(v)
rr
rr
(v)
(i)
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 022854 Rev 1
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 35 A, V
= 35 A, di/dt = 100 A/µs
= 35 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 4
Test conditions
Test conditions
7)
GS
and
D
GS
j
= 150 °C
= 21 A,
= 0
= 10 V
Figure
Figure
7)
7)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
Max. Unit
Max
140
1.5
35
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/17
A
A
V
A
A