STB80NF55-06T STMicroelectronics, STB80NF55-06T Datasheet - Page 5

• Manufacturer Part Number: STB80NF55-06T
• Description: N-channel 55 V, 5 mOhm, 80 A STripFET(TM) II Power MOSFET in a D2PAK package
• Manufacturer: STMicroelectronics

STB80NF55-06T
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 022702 Rev 1
I
I
di/dt = 100 A/µs,
V
(see
SD
SD
DD
= 80 A, V
= 80 A,
= 35 V, T
Figure
Test conditions
15)
GS
j
= 150 °C
= 0
Min.
Electrical characteristics
-
-
-
Typ.
0.32
100
6.5
Max.
320
1.5
80
Unit
nC
ns
A
A
V
A
5/15