STW47NM60ND STMicroelectronics, STW47NM60ND Datasheet
STW47NM60ND
Available stocks
Related parts for STW47NM60ND
STW47NM60ND Summary of contents
Page 1
... February 2011 N-channel 600 V, 0.075 Ω TO-247 FDmesh™ II Power MOSFET (with fast diode) R DS(on max < 0.088 Ω *area amongst the Figure 1. Marking 47NM60ND Doc ID 18281 Rev 2 STW47NM60ND TO-247 Internal schematic diagram Package Packaging TO-247 Tube 1/12 www.st.com 12 ...
Page 2
... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 18281 Rev 2 STW47NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
Page 3
... STW47NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1 ...
Page 4
... MHz 480 (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain DS Doc ID 18281 Rev 2 STW47NM60ND Min. Typ 600 GS = 250 µ 17.5 A 0.075 0.088 D Min. Typ 4300 - 250 25 ...
Page 5
... STW47NM60ND Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current ...
Page 6
... Figure 3. AM01508v1 10µs 100µs 1ms 10ms Figure 5. Figure 7. AM01511v1 R DS(on) (Ω) 0.085 T =25°C J 0.080 0.075 T =150°C J 0.070 0.065 0.060 I ( Doc ID 18281 Rev 2 STW47NM60ND Thermal impedance Transfer characteristics Static drain-source on resistance AM01512v1 I (A) D ...
Page 7
... STW47NM60ND Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 1.0 0.9 0.8 0.7 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 -50°C 0.8 0.7 0.6 0.5 0 Figure 11. Normalized on resistance vs AM01515v1 R DS(on) (norm) T (°C) 75 100 125 J Figure 13. Normalized B AM01517v1 BV (DSS) 25°C 1.05 T =150° ...
Page 8
... Figure 17. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 19. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 18281 Rev 2 STW47NM60ND 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
Page 9
... STW47NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 9. TO-247 mechanical data Dim ...
Page 10
... Package mechanical data Figure 20. TO-247 drawing 10/12 Doc ID 18281 Rev 2 STW47NM60ND 0075325_F ...
Page 11
... STW47NM60ND 5 Revision history Table 10. Document revision history Date 26-Nov-2010 11-Feb-2011 Revision 1 First release. 2 Updated coverpage, Doc ID 18281 Rev 2 Revision history Changes Table 5 Section 4. and 11/12 ...
Page 12
... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 18281 Rev 2 STW47NM60ND ...