MJD127 STMicroelectronics, MJD127 Datasheet - Page 5

• Manufacturer Part Number: MJD127
• Description: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
• Manufacturer: STMicroelectronics

MJD122, MJD127
2.1
Figure 2.
Figure 4.
Figure 6.
V
1000
CE(sat)
(V)
h
100
10
1.4
0.6
0.2
FE
0.01
0.1
1
Electrical characteristics (curves)
Safe operating area
DC current gain for NPN type
Collector-emitter saturation voltage
for NPN type
h
FE
= 250
0.1
V
CE
= 3 V
1
1
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
I c (A)
I c (A)
AM00696v1
AM00698v1
Doc ID 3541 Rev 11
Figure 3.
Figure 5.
Figure 7.
V
CE(sat)
1000
(V)
100
h
-1.4
-0.6
-0.2
10
FE
-0.01
-1
-0.1
Derating curve
DC current gain for PNP type
Collector-emitter saturation voltage
for PNP type
h
FE
= 250
-0.1
V
CE
Electrical characteristics
= -3 V
-1
-1
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
I c (A)
I c (A)
AM00697v1
AM00699v1
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