2STD1665 STMicroelectronics, 2STD1665 Datasheet - Page 3

• Manufacturer Part Number: 2STD1665
• Description: Low voltage fast-switching NPN power transistor
• Manufacturer: STMicroelectronics

2STD1665
2
(T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
V
V
V
Electrical characteristics
V
V
V
case
(BR)CBO
(BR)CEO
(BR)EBO
Symbol
CE(sat)
BE(sat)
BE(on)
C
I
I
h
CBO
EBO
t
CBO
t
on
FE
t
s
f
= 25°C unless otherwise specified).
(1)
(1)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-base
breakdown voltage
(I
Collector-emitter
breakdown voltage
(I
Emitter-base
breakdown voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter on
voltage
DC current gain
Collector-base
capacitance
(I
Resistive load
Turn-on time
Storage time
Fall time
E
C
E
B
C
E
=0)
= 0)
= 0)
= 0)
= 0)
= 0)
Parameter
Doc ID 12350 Rev 3
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
I
I
V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B(on)
CB
CB
EB
CB
BB(off)
= 100 µA
= 10 mA
= 100 µA
= 100 mA
= 1 A
= 2 A
= 6 A
= 6 A
= 4 A
= 4 A
= 10 mA
= 2 A
= 5 A
= 10 A
= 3 A
= 7 V
= 120 V
= 120 V
= 10 V
= -I
= -5 V
Test conditions
B(off)
= 300 mA
T
I
I
I
I
I
I
V
C
B
B
B
B
B
B
V
V
V
V
V
CE
f = 1 MHz
CE
CE
CE
CE
CC
= 100 °C
= 5 mA
= 50 mA
= 50 mA
= 150 mA
= 300 mA
= 200 mA
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
= 10 V
Electrical characteristics
Min.
150
150
150
65
90
30
7
Typ. Max. Unit
0.85
100
260
230
320
310
175
800
50
65
45
90
90
1
1.15
120
200
600
380
350
50
10
50
1
1
mV
mV
mV
mV
mV
nA
µA
nA
pF
ns
ns
ns
V
V
V
V
V
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