MJD3055 STMicroelectronics, MJD3055 Datasheet - Page 2

• Manufacturer Part Number: MJD3055
• Description: COMPLEMENTARY SILICON POWER TRANSISTORS
• Manufacturer: STMicroelectronics

Specifications of MJD3055

• Dc: N/A

MJD2955 / MJD3055
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP type voltage and current values are negative.
Safe Operating Area
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
V
R
R
CEO(sus)
CE(sat)
BE(on)
h
thj-case
thj-amb
I
I
I
I
CBO
CEO
EBO
CEX
FE
f
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
C
B
= 0)
= 0)
Parameter
E
B
= 0)
= 0)
BE
= -1.5 V)
V
V
V
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CE
CE
CB
CB
CE
EB
= 30 mA
= 4 A
= 10 A
= 4 A
= 4 A
= 10 A
= 0.5 A
= 5 V
= 70 V
= 70 V
= 70 V
= 70 V
= 30 V
case
= 25
Test Conditions
V
I
I
V
V
V
CE
o
B
B
CE
C unless otherwise specified)
CE
CE
= 3.3 A
= 0.4 A
= 10 V f = 500 KHz
= 4 V
= 4 V
= 4 V
Derating Curves
T
T
j
j
= 150
= 150
Max
Max
o
o
C
C
Min.
60
20
5
2
Typ.
6.25
100
Max.
100
0.5
1.1
1.8
20
20
50
2
2
8
o
o
MHz
Unit
C/W
C/W
mA
mA
mA
V
V
V
V
A
A
A