LET20045C STMicroelectronics, LET20045C Datasheet

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LET20045C

Manufacturer Part Number
LET20045C
Description
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Manufacturer
STMicroelectronics
Datasheet
Features
Description
The LET20045C is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
2.0 GHz. The LET20045C is designed for high
gain and broadband performance operating in
common source mode at 36 V. It is ideal for base
station applications requiring high linearity.
Table 1.
July 2011
Excellent thermal stability
Common source configuration
P
2000 MHz
P
2000 MHz
BeO free package
In compliance with the 2002/95/EC European
directive
OUT
OUT
(@ 28 V)= 54 W with 13.3 dB gain @
(@ 36 V)= 65 W with 12.5 dB gain @
Order code
LET20045C
Device summary
of n-channel enhancement-mode lateral MOSFETs
RF power transistor from the LdmoST family
Doc ID 022024 Rev 1
Package
M243
Figure 1.
1. Drain
2. Gate
Pin out
epoxy sealed
M243
2
1
LET20045C
LET20045C
Branding
3
3. Source
www.st.com
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LET20045C Summary of contents

Page 1

... The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode ideal for base station applications requiring high linearity. ...

Page 2

... Power dissipation (@ T DISS T Max. operating junction temperature J T Storage temperature STG Table 3. Thermal data Symbol R Junction-case thermal resistance th(JC) 2 °C) CASE Parameter = 70 °C) C Parameter Doc ID 022024 Rev 1 LET20045C Value Unit 80 V -0 130 W 200 °C -65 to +150 °C Value Unit 1.0 °C/W ...

Page 3

... LET20045C 2 Electrical characteristics °C C Table 4. Static Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS Table 5. ...

Page 4

... Impedance data 3 Impedance data Figure 2. Impedance data Table 6. Impedance data Frequency TBD 4/9 D Typical input G Zin S Z (Ω) IN TBD Doc ID 022024 Rev 1 LET20045C Z DL Typical drain load Z (Ω) DL TBD ...

Page 5

... LET20045C 4 Typical performances Figure 3. Gain vs output power and bias current 22 20 Freq = 2000 MHz V = 28V 0.01 0.1 1 Output power (W) Figure 5. Gain vs output power and supply voltage 22 Freq = 2000 MHz 500 36V 32V 30V 10 26V 24V ...

Page 6

... IMD vs output power @ 32 V IMD3 IMD5 IMD7 IMD9 F1 = 1998 MHz F2 = 2000 MHz V = 32V - I = 500mA Output power (W PEP) power @ 32 V Freq = 2000 MHz V = 32V IS95 modulation 750 KHz 9 channel FWD 1.98 MHz Efficiency 1 10 Output power (W) LET20045C 100 AM10108V1 = 500mA DQ 100 AM10110V1 ...

Page 7

... LET20045C 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Table 7. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data Dim ...

Page 8

... Revision history 6 Revision history Table 8. Document revision history Date 19-Jul-2011 8/9 Revision 1 Initial release. Doc ID 022024 Rev 1 LET20045C Changes ...

Page 9

... LET20045C Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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