DS1265AB Maxim, DS1265AB Datasheet - Page 6

• Manufacturer Part Number: DS1265AB
• Description: The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits
• Manufacturer: Maxim

POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
2.
3. t
4. t
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the
7. If the
PARAMETER
V
V
V
V
V
PARAMETER
Expected Data Retention Time
CC
CC
CC
CC
CC
low to the earlier of
buffers remain in a high-impedance state during this period.
buffers remain in high-impedance state during this period.
WE
OE
WP
DS
Fail Detect to
slew from V
slew from 0V to V
Valid to
Valid to End of Write Protection
is measured from the earlier of
is specified as the logical AND of
= V
is high for a Read Cycle.
CE
CE
IH
or V
low transition occurs simultaneously with or latter than the
CE
high transition occurs prior to or simultaneously with the
SEE NOTE 11
TP
and
IL
. If
CE
to 0V
WE
OE
and
CE
TP
Inactive
= V
or
WE
WE
IH
Inactive
during write cycle, the output buffers remain in a high-impedance state.
going high.
CE
CE
or
SYMBOL
SYMBOL
WE
or
t
t
t
t
REC
t
t
PD
PU
DR
F
R
WE
6 of 8
going high.
. t
WP
MIN
MIN
is measured from the latter of
150
150
10
TYP
TYP
WE
WE
MAX
MAX
125
1.5
2
high transition, the output
low transition, the output
(T
A
UNITS
UNITS
: See Note 10)
years
ms
ms
CE
µs
µs
µs
(T
or
A
DS1265Y/AB
= +25°C)
WE
NOTES
NOTES
11
going
9