DS1270W Maxim, DS1270W Datasheet - Page 6

• Manufacturer Part Number: DS1270W
• Description: The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits
• Manufacturer: Maxim

POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
2.
3. t
4. t
5. These parameters are sampled with a 5pF load and are not 100% tested.
6. If the
7. If the
8. If
V
V
V
V
V
Expected Data-Retention Time
CC
CC
CC
CC
CC
going low to the earlier of
buffers remain in a high-impedance state during this period.
buffers remain in a high-impedance state during this period.
the output buffers remain in a high-impedance state during this period.
WE
OE
WP
DS
Fail Detect to
Slew from V
Slew from 0V to V
Valid to
Valid to End of Write Protection
WE
is measured from the earlier of
is specified as the logical AND of
= V
is high for a read cycle.
CE
CE
is low or the
IH
PARAMETER
PARAMETER
or V
low transition occurs simultaneously with or latter than the
high transition occurs prior to or simultaneously with the
CE
SEE NOTE 11
TP
and
IL
. If
CE
to 0V
WE
OE
and
TP
WE
Inactive
= V
WE
low transition occurs prior to or simultaneously with the
CE
IH
Inactive
during write cycle, the output buffers remain in a high-impedance state.
or
WE
CE
going high.
or
SYMBOL
SYMBOL
CE
WE
t
t
t
t
REC
t
and
t
PD
PU
DR
F
R
going high.
6 of 8
WE
. t
MIN
MIN
150
150
WP
5
is measured from the latter of
TYP
TYP
WE
WE
MAX
MAX
125
1.5
2
high transition, the output
low transition, the output
(T
A
UNITS
UNITS
: See Note 10)
CE
years
ms
ms
µs
µs
µs
(T
low transition,
A
= +25°C)
CE
NOTES
NOTES
DS1270W
or
11
9
WE