AP1002BMX Advanced Power Electronics Corp., AP1002BMX Datasheet - Page 4

• Manufacturer Part Number: AP1002BMX
• Description: The AP1002BMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1002BMX

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 1.8
• Rds(on) / Max(m?) Vgs@4.5v: 3
• Qg (nc): 29
• Qgs (nc): 6.5
• Qgd (nc): 14
• Id(a): 180
• Pd(w): 89
• Configuration: Single N
• Package: GreenFET-MX

AP1002BMX
1000
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this area
limited by R
Single Pulse
T
10%
90%
I
V
V
A
D
DS
GS
=25
=25A
DS(ON)
10
o
V
C
Q
DS
0.1
t
G
d(on)
, Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
V
20
DS
DS
V
t
=15V
r
DS
=18V
=24V
30
1
40
t
d(off)
10
t
f
50
100ms
100us
10ms
1ms
DC
1s
60
100
Fig10. Effective Transient Thermal Impedance
6000
5000
4000
3000
2000
1000
0.001
0.01
0
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Single Pulse
V
Duty factor = 0.5
0.02
0.05
0.01
0.1
0.2
G
5
0.001
Q
V
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.1
17
1
P
DM
Duty Factor = t/T
Peak T
Rthja = 45℃/W
21
j
= P
t
DM
T
10
f=1.0MHz
x R
25
thjc
C
C
C
+ T
Q
iss
oss
rss
C
100
29
4