AP1003BST Advanced Power Electronics Corp., AP1003BST Datasheet - Page 2

• Manufacturer Part Number: AP1003BST
• Description: The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1003BST

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4.5
• Rds(on) / Max(m?) Vgs@4.5v: 7.5
• Qg (nc): 12
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 17.3
• Pd(w): 2.2
• Configuration: Single N
• Package: GreenFET-MX

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
I
I
V
t
Q
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Surface mounted on 1 in
4.T
5.Starting T
Electrical Characteristics@T
Source-Drain Diode
AP1003BST
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
C
Symbol
Symbol
measured with thermocouple mounted to top (Drain) of part.
j
=25
Continuous Source Current ( Body Diode )
o
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Pulsed Source Current ( Body Diode )
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
C , L=0.1mH , R
2
copper pad of FR4 board.
Parameter
Parameter
G
=25Ω
2
2
2
j
=25
j
=125
o
C(unless otherwise specified)
1
o
2
C)
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=11A, V
=11A, V
=11A
=11A
= 3.3 Ω,V
= 1.45 Ω
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=24V, V
=24V ,V
= +20V, V
=15V
=4.5V
=16V
=0V
=25V
GS
Test Conditions
Test Conditions
, I
D
GS
GS
D
=250uA
D
D
D
=250uA
GS
GS
=11A
=0V
=0V,
=13A
=11A
GS
DS
=0V
=0V
= 10 V
=0V
1.35
Min.
Min.
30
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1155 1850
Typ.
Typ.
0.82
400
170
3.6
5.2
7.6
1.1
23
12
10
41
22
32
26
3
6
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
2.35
19.2
150
110
4.7
7.5
52
48
39
1
2
1
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V
2