AP1004CMX Advanced Power Electronics Corp., AP1004CMX Datasheet - Page 4

• Manufacturer Part Number: AP1004CMX
• Description: The AP1004CMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1004CMX

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 1.8
• Rds(on) / Max(m?) Vgs@4.5v: 3.2
• Qg (nc): 31.5
• Qgs (nc): 5.3
• Qgd (nc): 15.3
• Id(a): 32
• Pd(w): 2.8
• Configuration: Single N
• Package: GreenFET-MX

AP1004CMX
1000
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this area
limited by R
Single Pulse
V
T
10%
90%
I
V
V
DS
A
D
DS
GS
=25
=25A
=13V
DS(ON)
o
V
C
Q
DS
20
0.1
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
40
1
t
d(off)
60
10
t
f
100ms
100us
10ms
1ms
DC
1s
80
100
Fig10. Effective Transient Thermal Impedance
0.0001
0.001
5000
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Duty factor = 0.5
Single Pulse
0.0001
G
0.01
0.05
0.02
5
0.2
0.1
Q
V
DS
GS
0.001
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.01
Q
Q
13
Charge
G
GD
0.1
17
P
DM
Duty Factor = t/T
Peak T
Rthja = 45℃/W
1
21
j
= P
t
DM
T
x R
f=1.0MHz
10
thjc
25
C
C
C
+ T
Q
C
iss
oss
rss
100
29
4