AP1005BSQ Advanced Power Electronics Corp., AP1005BSQ Datasheet - Page 4

• Manufacturer Part Number: AP1005BSQ
• Description: The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1005BSQ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 3.8
• Rds(on) / Max(m?) Vgs@4.5v: 7.5
• Qg (nc): 16.6
• Qgs (nc): 3
• Qgd (nc): 9.2
• Id(a): 19
• Pd(w): 2.2
• Configuration: Single N
• Package: GreenFET-SQ

AP1005BSQ
1000
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
Operation in this
V
area limited by
I
V
DS
R
D
GS
DS(ON)
DS
=15A
=13V
Single Pulse
T
A
Q
=25
V
0.1
8
t
G
d(on)
DS
, Total Gate Charge (nC)
o
, Drain-to-Source Voltage (V)
C
t
r
16
1
t
d(off)
24
10
t
f
100ms
100us
10ms
1ms
DC
1s
32
100
Fig10. Effective Transient Thermal Impedance
0.0001
0.001
2000
1600
1200
0.01
800
400
0.1
0.00001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Duty factor = 0.5
0.05
Single Pulse
0.0001
0.02
0.2
0.1
0.01
G
5
Q
V
0.001
GS
DS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.01
Q
Q
13
Charge
G
GD
0.1
17
1
P
DM
Duty Factor = t/T
Peak T
Rthja = 58℃/W
21
10
j
= P
t
DM
T
f=1.0MHz
x R
25
100
thjc
C
C
C
+ T
Q
iss
oss
rss
C
1000
29
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