AP20P02GH Advanced Power Electronics Corp., AP20P02GH Datasheet
AP20P02GH
Specifications of AP20P02GH
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AP20P02GH Summary of contents
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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP20P02GH/J Pb Free Plating Product BV -20V DSS R 52mΩ DS(ON) I -18A TO-252( TO-251(J) S ...
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... AP20P02GH/J Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 3. On-Resistance v.s. Gate Voltage 45 -4.5V -4.0V 30 -3.5V -3.0V 15 -2. -2. Fig 2. Typical Output Characteristics -8A D =25 ℃ ℃ ℃ ℃ 1.4 0.8 0.2 - AP20P02GH =150 Drain-to-Source Voltage ( - -4. Junction Temperature ( j Fig 4. Normalized On-Resistance v.s. Junction Temperature -4.5V -4.0V -3.5V -3.0V -2. -2. ...
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... AP20P02GH Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 10 T =25 °C C Single Pulse 1 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 100us 1ms 10ms 100ms DC 10 100 Fig 8. Effective Transient Thermal Impedance ...
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... 0.2 0.5 0.8 -V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 1.2 0.9 o =25 C 0.6 0.3 0 1.1 1.4 AP20P02GH ( Junction Temperature ( j Fig 12. Gate Threshold Voltage v.s. Junction Temperature f=1.0MHz Ciss Coss Crss 19 100 150 o C) ...
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... AP20P02GH -4.5 V Fig 13. Switching Time Circuit -1~-3mA I G Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5 x RATED THE OSCILLOSCOPE -4.5V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...