AP2317GN-HF Advanced Power Electronics Corp., AP2317GN-HF Datasheet - Page 3

• Manufacturer Part Number: AP2317GN-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2317GN-HF

• Vds: -20V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@4.5v: 52
• Rds(on) / Max(m?) Vgs@2.5v: 65
• Rds(on) / Max(m?) Vgs@1.8v: 90
• Qg (nc): 13
• Qgs (nc): 1.8
• Qgd (nc): 4.7
• Id(a): -4.2
• Pd(w): 1.38
• Configuration: Single P
• Package: SOT-23

70
60
50
40
30
20
16
12
5
4
3
2
1
0
8
4
0
Fig 1. Typical Output Characteristics
1
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 5. Forward Characteristic of
-V
0.2
-V
-V
Reverse Diode
DS
SD
GS
2
1
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.4
T
j
=150
T
A
o
0.6
3
2
=25
C
T
I
A
o
D
=25
C
=-3A
0.8
o
C
4
V
3
T
G
j
= -2.0V
=25
1
-5.0V
-4.5V
-3.5V
-2.5V
o
C
1.2
4
5
20
16
12
1.6
1.4
1.2
0.8
0.6
1.4
1.2
0.8
0.6
0.4
8
4
0
1
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
V
Fig 6. Gate Threshold Voltage v.s.
A
I
GS
= 1 5 0
D
= -4.5V
= -4A
-V
v.s. Junction Temperature
Junction Temperature
T
o
T
DS
C
j
1
j
0
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2.01E+08
2
50
50
AP2317GN-HF
65mΩ
100
100
3
o
o
V
C)
C)
G
= -1.5V
-5.0V
-4.5V
-3.5V
-2.5V
150
150
4
3