AP2451GY Advanced Power Electronics Corp., AP2451GY Datasheet

AP2451GY

Manufacturer Part Number
AP2451GY
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2451GY

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
37
Rds(on) / Max(m?) Vgs@2.5v
55
Qg (nc)
9
Qgs (nc)
1.5
Qgd (nc)
4
Id(a)
5
Pd(w)
1.38
Configuration
Complementary N-P
Package
2928-8
▼ ▼ ▼ ▼ Capable of 2.5V gate drive
▼ ▼ ▼ ▼ Lower on-resistance
▼ ▼ ▼ ▼ Surface mount package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
2928-8
D1
Parameter
D1
1
D2
D2
3
3
S1
G1
S2
3
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±12
G1
20
5
4
20
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
1.38
0.01
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
D1
S1
-3.7
±12
-20
-20
90
-3
G2
AP2451GY
37mΩ
75mΩ
-3.7A
-20V
Units
W/℃
℃/W
20V
Unit
200119051
5A
W
V
V
A
A
A
D2
S2

Related parts for AP2451GY

AP2451GY Summary of contents

Page 1

... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2928-8 N-channel Parameter 3 AP2451GY Pb Free Plating Product N-CH BV 20V DSS R 37mΩ DS(ON P-CH BV -20V DSS R 75mΩ DS(ON) I -3. ...

Page 2

... AP2451GY N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-16V DS V =-4. =-10V =3.3Ω, =10Ω = =-20V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.2A =3A, V =0V dI/dt=100A/µs AP2451GY Min. Typ. Max. -20 - =-1mA - 0. =-250uA - ...

Page 4

... AP2451GY N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP2451GY f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse t T Duty factor = t/T Peak T ...

Page 6

... AP2451GY P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP2451GY f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor =0.5 0.2 0.1 0.05 0.02 0. Single Pulse t T Duty factor = t/T ...

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