AP2605GY Advanced Power Electronics Corp., AP2605GY Datasheet - Page 3

• Manufacturer Part Number: AP2605GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2605GY

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 5.5
• Qgs (nc): 1
• Qgd (nc): 2.6
• Id(a): -4
• Pd(w): 2
• Configuration: Single P
• Package: SOT-26

105
45
40
35
30
25
20
15
10
95
85
75
65
55
4
3
2
1
0
5
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
3
0
0
Fig 5. Forward Characteristic of
T
1
A
T
0.2
=25
-V
j
-V
=150
Reverse Diode
-V
SD
o
2
DS
GS
C
5
, Source-to-Drain Voltage (V)
0.4
, Drain-to-Source Voltage (V)
o
, Gate-to-Source Voltage (V)
C
3
0.6
4
7
5
0.8
6
T
T
I
I
T
1
j
D
A
D
=25
A
9
=-4.2A
=25
= -3.0 A
=25
7
V
G
o
- 10 V
-7.0V
o
1.2
C
-5.0V
-4.5V
=-3.0V
o
C
C
8
1.4
11
9
1.6
1.4
1.2
1.0
0.8
0.6
2.5
1.5
0.5
40
35
30
25
20
15
10
5
0
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
T
= -4.0A
= -10V
1
A
= 150
T
-V
v.s. Junction Temperature
Junction Temperature
j
DS
, Junction Temperature (
T
0
2
0
j
o
, Drain-to-Source Voltage (V)
C
, Junction Temperature (
3
50
50
4
AP2605GY-HF
5
o
100
C)
100
6
o
V
C)
G
- 10 V
-7.0V
-5.0V
-4.5V
=-3.0V
7
150
150
8
3