AP3R303GMT-HF Advanced Power Electronics Corp., AP3R303GMT-HF Datasheet - Page 3

• Manufacturer Part Number: AP3R303GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3R303GMT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 3.3
• Rds(on) / Max(m?) Vgs@4.5v: 5
• Qg (nc): 13.3
• Qgs (nc): 2.5
• Qgd (nc): 7.2
• Id(a): 105
• Pd(w): 56.8
• Configuration: Single N
• Package: PMPAK 5x6

250
200
150
100
30
20
10
50
5.2
4.4
3.6
2.8
0
0
2
0.0
0
Fig 1. Typical Output Characteristics
2
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
V
0.2
o
V
Reverse Diode
DS
C
GS
V
1.0
, Drain-to-Source Voltage (V)
4
SD
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
T
j
=150
2.0
0.6
o
6
C
I
T
D
C
=20A
=25
0.8
o
C
T
3.0
8
j
=25
V
G
1
= 4.0 V
o
5.0V
7.0V
6.0V
10V
C
4.0
1.2
10
160
120
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
40
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=30A
=10V
v.s. Junction Temperature
Junction Temperature
V
T
DS
T
2.0
j
0
j
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
C
=150
AP3R303GMT-HF
o
C
4.0
50
50
6.0
100
o
100
o
C)
V
C)
G
5.0V
=4.0V
7.0V
6.0V
10V
8.0
150
150
3