AP4224GM Advanced Power Electronics Corp., AP4224GM Datasheet - Page 3

• Manufacturer Part Number: AP4224GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4224GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 14
• Rds(on) / Max(m?) Vgs@4.5v: 20
• Qg (nc): 23
• Qgs (nc): 6
• Qgd (nc): 14
• Id(a): 10
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

180
150
120
90
60
30
20
18
16
14
12
10
10
0
8
8
6
4
2
0
3
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
A
j
0.2
= 25
=150
V
V
Reverse Diode
1
V
DS
GS
SD
5
o
, Drain-to-Source Voltage (V)
o
, Gate-to-Source Voltage (V)
C
C
, Source-to-Drain Voltage (V)
0.4
2
0.6
7
3
0.8
I
T
D
A
= 7 A
=25 ℃
T
9
j
V
=25
4
G
1
= 3 .0V
o
7.0V
5.0V
4.5V
10V
C
1.2
11
5
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
3.0
2.5
2.0
1.5
1.0
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
D
A
G
= 150
=1 0 A
=10V
v.s. Junction Temperature
Junction Temperature
T
T
V
j
j
1
DS
, Junction Temperature (
0
, Junction Temperature (
0
o
C
, Drain-to-Source Voltage (V)
2
50
50
AP4224GM
o
o
3
100
100
C)
C)
V
G
= 3 .0V
5.0V
7.0V
4.5V
10V
4
150
150
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