AP4413GM Advanced Power Electronics Corp., AP4413GM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4413GM

Manufacturer Part Number
AP4413GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4413GM

Vds
-20V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
30
Rds(on) / Max(m?) Vgs@4.5v
40
Rds(on) / Max(m?) Vgs@2.5v
65
Qg (nc)
17
Qgs (nc)
4
Qgd (nc)
7
Id(a)
-7.8
Pd(w)
2.5
Configuration
Single P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4413GM
Manufacturer:
APEC
Quantity:
25 000
Company:
Part Number:
AP4413GM
Quantity:
45 000
Part Number:
AP4413GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
t
Notes:
AP4413GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=-2A, V
=-7A,
=-7A
=-2A
=3.3Ω,V
=10Ω
=0V, I
=-10V, I
=-4.5V, I
=-2.5V, I
=V
=-10V, I
=-20V, V
=-16V, V
=
=-16V
=-4.5V
=-10V
=0V
=-25V
±20V
GS
V
Test Conditions
Test Conditions
, I
GS
GS
D
D
=-250uA
=0V
=-250uA
D
GS
D
=0
D
D
GS
GS
=-7A
=-7A
=-4A
=-2A
=-10V
V
=0V
=0V
,
D
=-1mA
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.01
1140 1820
Typ.
Typ.
250
210
4.3
16
17
12
11
40
13
28
22
4
7
-
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
-1.5
-1.2
-25
30
40
65
27
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
Ω
ns
V
V
S
V

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