AP4435GJ-HF Advanced Power Electronics Corp., AP4435GJ-HF Datasheet - Page 3

• Manufacturer Part Number: AP4435GJ-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4435GJ-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 20
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 16.5
• Qgs (nc): 2.7
• Qgd (nc): 11
• Id(a): -40
• Pd(w): 44.6
• Configuration: Single P
• Package: TO-251

100
26.0
19.5
13.0
80
60
40
20
6.5
0.0
0
30
26
22
18
14
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
1
-V
o
Reverse Diode
-V
C
-V
DS
SD
4
GS
, Drain-to-Source Voltage (V)
0.4
T
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
j
2
=150
0.6
o
C
3
6
I
T
0.8
D
C
= - 16 A
=25
4
T
℃
1
V
j
=25
8
G
= - 4 .0 V
o
-7.0V
-6.0V
-5.0V
5
-10V
C
1.2
1.4
10
6
1.8
1.4
1.0
0.6
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
C
D
G
= 150
= - 26 A
=-10V
v.s. Junction Temperature
Junction Temperature
-V
o
C
T
T
DS
2
0
0
j
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2.01E+08
AP4435GH/J-HF
4
50
50
V
100
100
6
G
o
o
= - 4 .0 V
C)
C)
-7.0V
-6.0V
-5.0V
-10V
150
150
8
3