AP4503AGM-HF Advanced Power Electronics Corp., AP4503AGM-HF Datasheet
AP4503AGM-HF
Specifications of AP4503AGM-HF
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AP4503AGM-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 N-channel +20 3 6.9 3 5.5 1 Parameter 3 AP4503AGM-HF Halogen-Free Product 30V DSS R 28mΩ DS(ON) I 6.9A D -30V DSS R 36mΩ DS(ON) I -6. ...
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... AP4503AGM-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
Page 3
... I =- =-24V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=100A/µs AP4503AGM-HF Min. Typ. Max. Units - = = -25 = +100 - 12 ...
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... AP4503AGM-HF N-Channel 40 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
Page 5
... Duty factor=0.5 100us 0.2 1ms 0.1 0.1 10ms 100ms 0.05 1s 0.02 0. 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4503AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...
Page 6
... AP4503AGM-HF P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... DC Single Pulse 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4503AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...