AP4503BGM-HF Advanced Power Electronics Corp., AP4503BGM-HF Datasheet - Page 2

• Manufacturer Part Number: AP4503BGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4503BGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Qg (nc): 7
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 8.4
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
AP4503BGM-HF
N-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
g
gs
gd
iss
oss
rss
g
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
2
j
=25
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=8A
=1A
G
D
=1.7A, V
=8A,
o
=3.3Ω,V
=15Ω
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=30V, V
=+20V, V
=15V
=4.5V
=15V
=0V
=25V
C(unless otherwise specified)
GS
V
Test Conditions
Test Conditions
, I
GS
D
GS
D
=250uA
D
D
=0
D
=250uA
GS
GS
=8A
=8A
=5A
=0V
DS
V
=0V
=10V
=0V
,
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
370
1.5
3.5
3.5
1.5
14
15
90
75
18
6
6
7
9
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
590
9.6
1.2
18
35
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
ns
nC
Ω
V
V
S
V
2