AP4509AGM-HF Advanced Power Electronics Corp., AP4509AGM-HF Datasheet - Page 7

• Manufacturer Part Number: AP4509AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 12
• Qgs (nc): 2.5
• Qgd (nc): 7.5
• Id(a): 11.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0.0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
I
V
Single Pulse
V
V
Operation in this
D
area limited by
DS
T
GS
DS
= -7A
R
A
DS(ON)
= -15V
=25
-V
Q
8.0
o
0.1
t
C
DS
d(on)
G
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
t
r
16.0
1
t
d(off)
24.0
10
t
f
100ms
100us
10ms
1ms
DC
1 s
32.0
100
Fig 10. Effective Transient Thermal Impedance
0.001
2000
1600
1200
0.01
800
400
0.1
1
0.0001
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
30
V
0.01
0.02
Duty factor=0.5
0.2
0.1
0.05
G
Single Pulse
0.001
5
-V
Q
GS
DS
0.01
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
Q
Q
0.1
13
G
GD
AP4509AGM-HF
-30
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
C
+ T
C
C
Q
a
oss
iss
rss
1000
29
7