AP4816GSM Advanced Power Electronics Corp., AP4816GSM Datasheet - Page 8

• Manufacturer Part Number: AP4816GSM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4816GSM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): 6.7
• Pd(w): 1.4
• Configuration: Dual N
• Package: SO-8

Channel-2
AP4816GSM
0.01
100
0.1
16
12
10
1
8
4
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
I
V
V
D
Single Pulse
T
=8A
GS
DS
A
=25
V
10
Q
DS
V
V
V
o
G
t
C
, Drain-to-Source Voltage (V)
d(on)
DS
DS
DS
, Total Gate Charge (nC)
=15V
=20V
=24V
1
t
20
r
30
10
t
d(off)
40
t
f
100us
1ms
10ms
100ms
1s
DC
100
50
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
100
0.01
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.001
G
Duty factore=0.5
5
0.02
0.05
0.01
0.2
0.1
V
Single Pulse
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
21
10
thja
=100℃/W
j
t
= P
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
+ T
Q
iss
rss
a
oss
1000
29
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