AP60T03AS Advanced Power Electronics Corp., AP60T03AS Datasheet
AP60T03AS
Specifications of AP60T03AS
Related parts for AP60T03AS
AP60T03AS Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60T03AS/P BV 30V DSS R 12mΩ DS(ON) I 45A D TO-263(S) TO-220(P) Rating Units 30 ± 120 44 0 ...
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... AP60T03AS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... I =20A =10V =25 ℃ ℃ ℃ ℃ 1.6 1.2 0.8 0.4 11 -50 T Fig 4. Normalized On-Resistance 2.8 2.3 1 1.3 0.8 0.3 1.5 -50 T Fig 6. Gate Threshold Voltage v.s. AP60T03AS/P 10V o C 8.0V 6.0V 5.0V V =4.0V GS 2.0 3.0 4.0 5.0 , Drain-to-Source Voltage ( 100 175 o , Junction Temperature ( C) j v.s. Junction Temperature 25 100 175 o , Junction Temperature ( Junction Temperature ...
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... AP60T03AS =20A D V =16V DS V =20V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...