AP62T03GH Advanced Power Electronics Corp., AP62T03GH Datasheet
AP62T03GH
Specifications of AP62T03GH
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AP62T03GH Summary of contents
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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET □ Parameter 1 3 Parameter AP62T03GH/J RoHS-compliant Product BV 30V DSS R 12mΩ DS(ON) I 54A TO-252(H) G ...
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... AP62T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 -50 1.2 Fig 6. Gate Threshold Voltage v.s. AP62T03GH/J o 10V T = 175 C C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 175 Junction Temperature ( 100 ...
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... AP62T03GH =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 90 V =5V DS ...