AP6680AGM Advanced Power Electronics Corp., AP6680AGM Datasheet - Page 3

• Manufacturer Part Number: AP6680AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6680AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 11
• Rds(on) / Max(m?) Vgs@4.5v: 16.5
• Qg (nc): 17
• Qgs (nc): 2.7
• Qgd (nc): 9.9
• Id(a): 12
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

50
40
30
20
10
60
40
20
10
0
0
8
6
4
2
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
Reverse Diode
1
V
DS
GS
SD
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
, Source-to-Drain Voltage (V)
0.4
j
=150
2
T
o
A
C
= 25
0.6
6
I
T
o
D
C
A
3
= 8 A
=25
0.8
T
℃
j
=25
8
V
4
o
G
C
1
= 3.0 V
7.0 V
5.0 V
4.5 V
10V
1.2
10
5
20.0
10.0
0.0
1.6
1.3
1.0
0.7
50
40
30
20
10
0
0
25
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. On-Resistance vs.
I
V
D
G
= 12 A
=10V
1
v.s. Junction Temperature
Drain Current
50
V
T
10
DS
j
V
2
, Junction Temperature (
I
V
, Drain-to-Source Voltage (V)
GS
D
GS
T
=4.5V
, Drain Current (A)
A
=10V
75
= 150
3
20
o
C
4
100
AP6680AGM
5
30
o
V
125
C)
G
= 3.0 V
6
7.0 V
5.0 V
4.5 V
10V
7
150
40
3