AP70T03GP Advanced Power Electronics Corp., AP70T03GP Datasheet - Page 3

• Manufacturer Part Number: AP70T03GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03GP

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 16.5
• Qgs (nc): 5
• Qgd (nc): 10.3
• Id(a): 60
• Pd(w): 53
• Configuration: Single N
• Package: TO-220

100
200
150
100
0.1
10
60
40
20
50
0
1
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
j
C
=175
=25
V
V
Reverse Diode
V
SD
o
o
DS
GS
C
C
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
1.5
0.5
6
T
3.0
1
j
=25
T
I
8
C
D
=25
o
=20A
V
C
G
6.0V
℃
=4.0V
8.0V
10V
4.5
1.5
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.5
2.1
1.7
1.3
0.9
120
90
60
30
0
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
C
V
I
=175
D
G
=33A
=10V
v.s. Junction Temperature
Junction Temperature
V
o
T
C
DS
T
j
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
1.5
25
25
AP70T03GS/P
3.0
100
100
V
o
o
C )
G
C)
8.0V
6.0V
=4.0V
10V
175
4.5
175
3