AP9916GJ Advanced Power Electronics Corp., AP9916GJ Datasheet - Page 2

• Manufacturer Part Number: AP9916GJ
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9916GJ

• Vds: 18V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 25
• Rds(on) / Max(m?) Vgs@2.5v: 40
• Qg (nc): 17.5
• Qgs (nc): 1.2
• Qgd (nc): 7.9
• Id(a): 35
• Pd(w): 50
• Configuration: Single N
• Package: TO-251

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9916GH/J
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
SM
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Continuous Source Current ( Body Diode )
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Pulsed Source Current ( Body Diode )
Forward On Voltage
Parameter
Parameter
2
2
2
j
j
j
=25
=125
=25
o
C)
o
C)
o
C(unless otherwise specified)
1
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
j
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
G
D
=18A
=18A
=25℃, I
=V
=0.56Ω
=3.3Ω,V
=V
=10V, I
=18V, V
=18V ,V
=18V
=10V
=18V
=0V, I
=4.5V, I
=2.5V, I
=
=5V
=0V
G
± 8V
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
D
=250uA
=35A, V
D
D
D
=250uA
GS
GS
GS
=6A
=6A
=5.2A
=0V
=0V
=5V
S
=1.3V
GS
D
=0V
=1mA
Min.
Min.
0.5
18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.03
17.5
25.6
Typ.
527
258
112
1.2
7.9
7.3
18
98
98
-
-
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
250
1.3
25
40
25
35
90
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
A
V