AP7811GM Advanced Power Electronics Corp., AP7811GM Datasheet - Page 5

• Manufacturer Part Number: AP7811GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP7811GM

• Vds: 25V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 12
• Qg (nc): 32
• Qgs (nc): 2.6
• Qgd (nc): 15.5
• Id(a): 11.8
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

100.00
10.00
1.00
0.10
0.01
12
10
8
6
4
2
0
0.1
0
I
D
Fig 9. Gate Charge Characteristics
=11.8A
Fig 11. Forward Characteristic of
T
0.3
10
j
=150
Q
G
o
0.5
Reverse Diode
C
, Total Gate Charge (nC)
20
V
V
DS
0.7
DS
V
V
=10V
DS
=15V
SD
30
=20V
(V)
0.9
T
j
=25
40
o
1.1
C
50
1.3
60
1.5
Fig 10. Typical Capacitance Characteristics
10000
1000
100
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1
1
-50
Fig 12. Gate Threshold Voltage v.s.
5
Junction Temperature
Junction Temperature (
0
9
13
V
DS
50
(V)
17
AP7811GM
o
C )
21
100
f=1.0MHz
25
Ciss
Coss
Crss
150
29