AP85U03GH-HF Advanced Power Electronics Corp., AP85U03GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP85U03GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85U03GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 5.5
• Rds(on) / Max(m?) Vgs@4.5v: 12
• Qg (nc): 41.5
• Qgs (nc): 7.3
• Qgd (nc): 27
• Id(a): 75
• Pd(w): 60
• Configuration: Single N
• Package: TO-252

AP85U03GH-HF
1000
100
0.1
10
10
1
8
6
4
2
0
0.01
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
10%
90%
Operation in this area
Single Pulse
V
I
limited by R
T
V
D
C
GS
DS
=30A
=25
DS(ON)
o
V
Q
C
0.1
20
DS
t
G
V
d(on)
V
DS
, Total Gate Charge (nC)
,Drain-to-Source Voltage (V)
V
DS
=15V
DS
=18V
t
r
=24V
40
1
t
d(off)
60
10
t
f
100ms
100us
10ms
1ms
DC
80
100
Fig 10. Effective Transient Thermal Impedance
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Single Pulse
V
Duty factor = 0.5
0.02
0.1
0.05
0.01
0.2
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
T
x R
f=1.0MHz
thjc
25
+ T
Q
C
C
C
C
iss
oss
rss
1
29
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