AP85U03GM-HF Advanced Power Electronics Corp., AP85U03GM-HF Datasheet - Page 3

• Manufacturer Part Number: AP85U03GM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85U03GM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 9
• Qg (nc): 38
• Qgs (nc): 61
• Id(a): 18.6
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

60
50
40
30
20
10
16
12
0
8
4
0
9
8
7
6
5
4
3
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
0
V
V
V
DS
4
GS
SD
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
T
j
=150
1
T
A
o
= 25
0.6
6
C
T
I
D
A
o
1
C
=25
= 10 A
0.8
o
C
8
T
V
2
j
=25
G
1
=4.0V
7.0 V
6.0 V
5.0 V
10 V
o
C
1.2
2
10
1.9
1.4
0.9
0.4
60
50
40
30
20
10
1.6
1.2
0.8
0.4
0.0
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 16 A
=10V
v.s. Junction Temperature
Junction Temperature
V
DS
T
T
1
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
T
A
= 150
AP85U03GM-HF
2
o
50
50
C
100
100
3
o
o
C)
C)
V
G
=4.0V
7.0 V
6.0 V
5.0 V
10 V
150
150
4
3