AP86T03GJ Advanced Power Electronics Corp., AP86T03GJ Datasheet - Page 4

• Manufacturer Part Number: AP86T03GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP86T03GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6.5
• Rds(on) / Max(m?) Vgs@4.5v: 11
• Qg (nc): 25
• Qgs (nc): 5.6
• Qgd (nc): 17
• Id(a): 75
• Pd(w): 75
• Configuration: Single N
• Package: TO-251

AP86T03GH/J
1000
100
10
10
1
8
6
4
2
0
0.1
Fig 11. Switching Time Waveform
0
Fig 9. Maximum Safe Operating Area
Fig 7. Gate Charge Characteristics
Single Pulse
90%
T
10%
I
V
V
C
D
DS
=25
GS
=30A
10
o
V
Q
C
V
DS
V
G
DS
t
V
d(on)
DS
, Total Gate Charge (nC)
,Drain-to-Source Voltage (V)
=15V
DS
=18V
1
=24V
t
20
r
30
10
t
d(off)
40
t
f
100ms
100us
10ms
1ms
DC
50
100
Fig 10. Effective Transient Thermal Impedance
4000
3000
2000
1000
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
0.05
0.1
0.01
0.2
Duty factor = 0.5
V
Single Pulse
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
T
x R
f=1.0MHz
thjc
25
+ T
Q
C
C
C
C
iss
oss
rss
1
29
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