AP9412AGH Advanced Power Electronics Corp., AP9412AGH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9412AGH

Manufacturer Part Number
AP9412AGH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9412AGH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
8
Qg (nc)
21
Qgs (nc)
3.6
Qgd (nc)
12
Id(a)
68
Pd(w)
44.6
Configuration
Single N
Package
TO-252
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
44.6
±20
250
30
68
43
DS(ON)
G
DSS
Value
D
2.8
110
S
AP9412AGH
TO-252(H)
200806042
6mΩ
Units
Units
℃/W
℃/W
30V
68A
W
V
V
A
A
A
1

Related parts for AP9412AGH

AP9412AGH Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9412AGH RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 68A □ S TO-252(H) Rating ...

Page 2

... AP9412AGH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 0.0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9412AGH o T =150 C 10V C 7 .0V 6.0V 5 =4.0V G 1.0 2.0 3 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...

Page 4

... AP9412AGH 12 I =30A =15V DS V =18V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 9412AGH YWWSSS 0.127~0.381 C Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.5 0.85 E1 5.10 5.70 6.30 E2 0.50 1.10 1. ...

Related keywords