AP9412GI Advanced Power Electronics Corp., AP9412GI Datasheet - Page 4

• Manufacturer Part Number: AP9412GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9412GI

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 8
• Qg (nc): 26
• Qgs (nc): 4.6
• Qgd (nc): 16
• Id(a): 68
• Pd(w): 34.7
• Configuration: Single N
• Package: TO-220CFM

AP9412GI
1000
100
0.1
12
10
10
8
6
4
2
0
1
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
90%
10%
V
I
V
D
Single Pulse
DS
GS
T
= 40 A
10
C
V
=25
DS
Q
V
t
o
, Drain-to-Source Voltage (V)
d(on)
G
DS
C
V
, Total Gate Charge (nC)
20
=15V
1
DS
V
=20V
t
DS
r
=24V
30
40
10
t
d(off)
t
f
50
100ms
100us
10ms
1ms
DC
1s
100
60
Fig 10. Effective Transient Thermal Impedance
10000
0.01
1000
0.1
100
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
4.5V
0.2
V
Duty factor=0.5
0.1
0.02
0.05
0.01
Single Pulse
G
0.0001
5
0.31
V
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
G
Charge
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
+ T
t
Q
Q
C
C
rr
iss
C
rr
rss
oss
10
29
4